Transistor 50T65FD1 SGT50T65FD1 50T65 Igbt 650v 50AFeatures-High Speed Switching & Low Power Loss-VCE(sat) = 1.85V at IC = 50A-Eoff = 0.55mJ at TC = 25°C-High Input Impedance-trr = 80ns (typ.) at diF/dt = 1000A/ micros-Maximum junction temperature 175°CApplications-PFC-UPS-PV Inverter